I-silicon carbide (SiC) i-ceramic powderinezinzuzo zamandla okushisa aphezulu, ukumelana okuhle kwe-oxidation, ukumelana nokugqoka okuphezulu nokuzinza kokushisa, i-coefficient encane yokwandisa ukushisa, ukuhanjiswa okuphezulu kwe-thermal, ukuzinza okuhle kwamakhemikhali, njll. Ngakho-ke, kuvame ukusetshenziswa ekwenzeni amakamelo omlilo, ukushisa okuphezulu kokushisa. amadivaysi, amapheshana amelana nezinga lokushisa, izingxenye zenjini yendiza, imikhumbi yokusabela amakhemikhali, amashubhu okushintsha ukushisa nezinye izingxenye zemishini ngaphansi kwezimo ezinzima, futhi kuyimpahla yobunjiniyela esetshenziswa kakhulu.Ayidlali nje indima ebalulekile emikhakheni yobuchwepheshe obuphezulu esathuthukiswayo (njengezinjini ze-ceramic, imikhumbi-mkhathi, njll.), kodwa futhi inemakethe ebanzi nezinkundla zokufaka izicelo okufanele zithuthukiswe kumandla amanje, insimbi, imishini, izinto zokwakha. , imboni yamakhemikhali neminye imikhakha.

Izindlela zokulungiselela zei-silicon carbide powderingahlukaniswa ngokuyinhloko izigaba ezintathu: indlela yesigaba esiqinile, indlela yesigaba se-liquid kanye nendlela yesigaba segesi.

1. Indlela yesigaba esiqinile

Indlela yesigaba esiqinile ikakhulukazi ihlanganisa indlela yokunciphisa i-carbothermal kanye nendlela yokusabela eqondile ye-silicon carbon.Izindlela zokunciphisa i-Carbothermal nazo zihlanganisa indlela ye-Acheson, indlela yesithando somlilo esiqondile kanye nendlela yokuguqula izinga lokushisa eliphezulu.I-silicon carbide powderukulungiswa kwaqale kwalungiselelwa indlela ye-Acheson, kusetshenziswa i-coke ukunciphisa i-silicon dioxide ezingeni lokushisa eliphezulu (cishe 2400 ℃), kodwa impushana etholwe ngale ndlela inosayizi wezinhlayiyana ezinkulu (>1mm), idla amandla amaningi, futhi inqubo inkimbinkimbi.Ngawo-1980, kwavela imishini emisha yokwenza i-β-SiC powder, njengesithando somlilo esiqondile nesiguquli sokushisa okuphezulu.Njengoba i-polymerization ephumelelayo nekhethekile phakathi kwe-microwave nezinto zamakhemikhali ekuqinile kuye kwacaciswa kancane kancane, ubuchwepheshe bokwenza i-sic powder ngokufudumeza i-microwave sebukhule ngokwandayo.Indlela yokusabela eqondile ye-silicon carbon ihlanganisa nokuzisakaza kokushisa okuphezulu kokuhlanganiswa (SHS) kanye nendlela yokuhlanganisa imishini.Indlela yokuhlanganisa yokunciphisa i-SHS isebenzisa ukusabela kwe-exothermic phakathi kwe-SiO2 ne-Mg ukuze ivale ukuntuleka kokushisa.Ii-silicon carbide powderetholwe ngale ndlela inokuhlanzeka okuphezulu kanye nosayizi wezinhlayiyana ezincane, kodwa i-Mg emkhiqizweni idinga ukususwa ngezinqubo ezilandelayo ezifana nokukha.

2 indlela yesigaba se-liquid

Indlela yesigaba se-liquid ikakhulukazi ihlanganisa indlela ye-sol-gel kanye nendlela yokubola kwe-polymer eshisayo.Indlela ye-Sol-gel iyindlela yokulungiselela ijeli equkethe i-Si no-C ngenqubo efanele ye-sol-gel, bese i-pyrolysis kanye nokunciphisa izinga lokushisa eliphezulu le-carbothermal ukuthola i-silicon carbide.Ukushisa okuphezulu kokubola kwe-polymer ephilayo kuwubuchwepheshe obusebenzayo bokulungiswa kwe-silicon carbide: enye ukushisa i-gel polysiloxane, ukusabela kokubola ukuze kukhishwe ama-monomers amancane, futhi ekugcineni kwakha i-SiO2 ne-C, bese ngokusabela kokunciphisa i-carbon ukukhiqiza i-SiC powder;Okunye ukushisa i-polysilane noma i-polycarbosilane ukuze kukhululwe ama-monomer amancane ukuze akhe uhlaka lwamathambo, futhi ekugcineni akhe.i-silicon carbide powder.

3 Indlela yesigaba segesi

Njengamanje, i-gas phase synthesis yei-silicon carbideI-ceramic ultrafine powder ikakhulukazi isebenzisa i-gas phase deposition (CVD), i-Plasma Induced CVD, i-Laser Induced CVD nobunye ubuchwepheshe ukubola izinto eziphilayo ekushiseni okuphezulu.I-powder etholakalayo inezinzuzo zokuhlanzeka okuphezulu, usayizi wezinhlayiyana ezincane, i-particle agglomeration encane nokulawula okulula kwezingxenye.Kuyindlela ethuthuke kakhulu njengamanje, kodwa ngezindleko eziphakeme kanye nesivuno esiphansi, akulula ukufeza ukukhiqizwa ngobuningi, futhi ifaneleka kakhulu ekwenzeni izinto zaselabhorethri kanye nemikhiqizo enezidingo ezikhethekile.

Njengamanje, i-i-silicon carbide powderesetshenziswa ngokuyinhloko i-submicron noma i-nano level powder, ngoba usayizi wezinhlayiyana ze-powder mncane, umsebenzi ophezulu ongaphezulu, ngakho-ke inkinga eyinhloko ukuthi i-powder kulula ukukhiqiza i-agglomeration, kuyadingeka ukuguqula ubuso be-powder ukuvimbela noma ukuvimbela. i-agglomeration yesibili ye-powder.Njengamanje, izindlela zokuhlakazwa kwe-SiC powder ikakhulukazi zihlanganisa lezi zigaba ezilandelayo: ukuguqulwa kwendawo ephezulu yamandla, ukugeza, ukwelashwa kwe-disperant of powder, ukuguqulwa kwe-inorganic coating, ukuguqulwa kwe-organic coating.